While investigating ovonic threshold switching (OTS) devices for selector applications, researchers at imec observed an interesting phenomenon: the device can operate as a memory itself.
This OTS-only memory involves a simple and cost-effective fabrication process, is scalable to larger densities, and shows promising performance characteristics for compute express link (CXL) memory-like applications – in between DRAM and NAND.
By reading this article, originally published in EDN, you will learn:
- how the OTS-only memory evolved out of OTS selector device technology,
- how it works,
- and which research directions are needed to meet the specs of a CXL memory for high-performance computing applications.
Read the article in EDN.
Daniele Garbin received his Ph.D. in nanoelectronics and nanotechnology from Université Grenoble Alpes, Grenoble, France, in 2015. In 2016, he joined imec, Leuven, Belgium, where he works as an R&D Engineer. His current research interests include OTS and various emerging memory device technologies.
Gouri Sankar Kar received his Ph.D. in semiconductor device physics from the Indian Institute of Technology, Kharagpur, India, in 2002. From 2002 to 2005, he was a visiting scientist at Max Planck Institute for Solid State Research, Stuttgart, Germany. In 2006, he joined Infineon/Qimonda in Dresden, Germany, as lead integration engineer and was responsible for vertical transistor development for the DRAM application. In 2009, he joined imec, Leuven, Belgium, where he is currently working as the VP memory (DRAM, MRAM, FeRAM, NAND etc.) and as the Program Director Exploratory Logic (MX2 FET and CNTFET).
Published on:
11 March 2024
