Influence of growth conditions in the industrial scale of MX2 materials

Novel two-dimensional materials, especially semiconducting transition metal dichalcogenides (MX2, with M a transition metal and X a chalcogen) offer advanced functionality in complex and ultra-scaled integrated systems. Given their compelling electronic, magnetic, and optical properties for a monolayer form, IMEC explores their integration for various applications and systems, particularly for advanced CMOS technologies in a beyond silicon roadmap [1].

One of the major challenges in demonstrating high-performance 2D scaled devices is improving the transport properties of the channels. To achieve this, it is important to understand the impact of different growth conditions on defect formation in MX2 and how this affects electrical transport. IMEC is currently exploring multiple techniques to establish a correlation between growth conditions and the physical properties of MX2 material.

In this project, the candidate will be part of the MX2 growth team IMEC and will work in close relationships with different characterization teams trying to different growth conditions with other physical characterization techniques. We want to understand how to improve our materials' growth based on the films' physical characterization. Activities include split definition, manipulation, and preparation of samples for growth. Sample preparation for physical characterizations: In-plane XRD, optical microscopy, AFM, and Raman/PL spectroscopy, together with the analysis of the data. All the necessary training will be provided.

[1] D. Akinwande, et al., Nature 2019, 573, 507