alt

To Stories

imec logo

Imec World-First to Develop 200V and 650V dispersion free normally-off/e-mode Power Devices on 200mm/8-inch Si Wafers

Reading room

article GaN & InP

Longread

Scaling up GaN- and InP-based technologies for 5G and 6G
Article GaN-HEMTs

Research update

GaN-based devices for advanced RF applications
GaN

Research update

Monolithic integration of GaN components boosts power integrated circuits
SEM header

Press

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC
Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Press

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest
Imec-and-AIXTRON-Demonstrate-200-mm-GaN-Epitaxy-on-AIX-G5+-C-for-1200V-Applications-with-Breakdown-in-Excess-of-1800V.jpg

Press

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V
alt
Towards monolithically integrated all-GaN power ICs
alt

Press

Imec paves the way to boosting GaN performance and enabling true GaN-IC technology
alt
A new generation of power electronics will make electric cars more efficient and cheap
alt
Packaging solution for GaN-on-200mm Si power devices
alt

Press

Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates
alt
First time demonstration of fully isolated GaN power devices using SOI technology

Published on:

13 June 2017

Contact us