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Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates

Achievement paves the way to GaN power technology at high voltages above 650V

Reading room

article GaN & InP

Longread

Scaling up GaN- and InP-based technologies for 5G and 6G
Article GaN-HEMTs

Research update

GaN-based devices for advanced RF applications
GaN

Research update

Monolithic integration of GaN components boosts power integrated circuits
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Press

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC
Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Press

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest
Imec-and-AIXTRON-Demonstrate-200-mm-GaN-Epitaxy-on-AIX-G5+-C-for-1200V-Applications-with-Breakdown-in-Excess-of-1800V.jpg

Press

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V
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Towards monolithically integrated all-GaN power ICs
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Press

Imec paves the way to boosting GaN performance and enabling true GaN-IC technology
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A new generation of power electronics will make electric cars more efficient and cheap
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Packaging solution for GaN-on-200mm Si power devices
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Press

Imec World-First to Develop 200V and 650V dispersion free normally-off/e-mode Power Devices on 200mm/8-inch Si Wafers
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First time demonstration of fully isolated GaN power devices using SOI technology

Published on:

6 April 2018

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