Study on EUV mask-induced polarization effect

To print ever smaller features at high contrast projection lithography technology has evolved to shorter wavelength light and larger numerical aperture (NA). After enabling the EUV wavelength, the industry is looking into increasing the NA. When NA is higher than 0.55, polarization effect will play a role. This study aims to identify EUV specific challenges regarding EUV mask induced polarization effect. Through this work, we try to quantify how much the polarized light is generated from the EUV mask itself and how much the impact is due to it. We also try to test the accuracy of the simulations, see if polarization resolved measurements can be used to infer mask model/mask degradation status. The measurement has already been commissioned and is currently in progress. Based on these measurement results, we plan to analyze the phenomenon and use a simulation model to make predictions.
 

Type of Project: Internship 

Master's degree: Master of Science; Master of Engineering Science; Master of Engineering Technology 

Master program: Physics 

Duration: 6-9 months 

Supervisor: Stefan De Gendt (Chemistry, Nano) 

For more information or application, please contact the supervising scientists Inhwan Lee (inhwan.lee@imec.be), Joern-Holger Franke (joern-holger.franke@imec.be), Andreas Frommhold (andreas.frommhold@imec.be) and Vicky Philipsen (vicky.philipsen@imec.be). 

Imec allowance will be provided.