Investigating Electrostatic Discharge Effect on Thin-Film Devices
Leuven | More than two weeks ago
At imec we design, process and test thin-film circuits based on amorphous Indium Gallium Zinc Oxide transistors (a-IGZO). These flexible circuits find applications in many domains including life sciences, notably in neuroscience. These circuits can be affected and damaged by electrostatic discharge (ESD), which is caused by a difference of potential between a device and its environment. To protect these circuits, we are investigating various design strategies and need to understand the best approach.
This internship will therefore focus on:
- Testing the different protection circuits,
- Understanding the efficiency of the protection they provide to the a-IGZO transistors,
- Identifying the optimum strategy to include in future designs.
Type of project: Internship
Duration: 4 to 6 months
Required degree: Master of Engineering Science, Master of Engineering Technology, Master of Science
Required background: Electrotechnics/Electrical Engineering, Electromechanical engineering, Physics
Supervising scientist(s): For further information or for application, please contact: Marko Simicic (Marko.Simicic@imec.be) and Mauricio Velazquez Lopez (Mauricio.VelazquezLopez@imec.be) and Florian De Roose (Florian.DeRoose@imec.be) and Paoline Coulson (Paoline.Coulson@nerf.be)
Imec allowance will be provided.