EUV exposure impact on patterning 2D materials for ultrascaled devices beyond SI

2D transition metal dichalcogenides (TMDs) are expected to enable scaling beyond silicon limits. To integrate 2D TMDs into ultra-scaled CMOS devices, novel patterning technology via state-of-the-art EUV lithography, is essential to take advantage of its angstrom resolution to create nanoscaled designs. However, this brings up a new set of challenges related to the ultra-thin body of these layers, including the need for thin EUV-sensitive patterning material (resist). Innovative methods for resistless patterning are expected to be developed by combining area-selective processing with EUV lithography. Area-selective (ASD), etching and modification of 2D TMDs will be studied by using atomic layer deposition (ALD) and atomic layer etching (ALE) techniques. Atomic-level interactions of EUV photons and plasma gases on 2D materials will be characterized by spectroscopic metrology to understand the iImpact of surface modification using EUV light