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Imec Reports Breakthrough Work that Advances Path for Nanoscale Spin-Wave Majority Gates
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Imec improves performance and understanding of stacked nanowire Gate-All-Around transistors for N3 and beyond
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Imec and partners report major breakthroughs for spintronic logic devices in two different implementations
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Imec demonstrates the feasibility of introducing SST-MRAM as a last-level cache at the 5nm technology node
Published on:
31 October 2016
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