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Imec Demonstrates Gate-All-Around MOSFETs with Lateral Silicon Nanowires at Scaled Dimensions

Industry-First Achievement Advances Realization of Sub-10nm Technology Nodes

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Silicon photonics technology for next-generation datacenter interconnects
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How to efficiently cool power electronics and optoelectronic sensors?
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Make smartphones and autonomous vehicles see the impossible
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Solving the contact resistance challenge for 7nm and beyond CMOS
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A cold shower for chips
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Sensor searches demanding application
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A 300mm platform for 2D-material based MOSFET devices
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Iuliana Radu on quantum computers
Man in white suit working in imec cleanroom

Press

Imec improves performance and understanding of stacked nanowire Gate-All-Around transistors for N3 and beyond
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Press

Imec and partners report major breakthroughs for spintronic logic devices in two different implementations
Man in white suit working in imec cleanroom

Press

Imec demonstrates the feasibility of introducing SST-MRAM as a last-level cache at the 5nm technology node
Cleanroom

Press

Imec first to stack FinFETS with 45nm fin pitch using sequential 3D integration

Published on:

16 June 2016

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