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Imec and Partners Uncover Path to Unlock 2D Materials-Based Field-Effect Transistors (FETs) for High Performance Logic

Breakthrough Results Were Published in this Week’s Scientific Reports

Reading room

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Silicon photonics technology for next-generation datacenter interconnects
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How to efficiently cool power electronics and optoelectronic sensors?
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Make smartphones and autonomous vehicles see the impossible
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Solving the contact resistance challenge for 7nm and beyond CMOS
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A cold shower for chips
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Sensor searches demanding application
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A 300mm platform for 2D-material based MOSFET devices
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Iuliana Radu on quantum computers
Man in white suit working in imec cleanroom

Press

Imec improves performance and understanding of stacked nanowire Gate-All-Around transistors for N3 and beyond
Man in white suit working in imec cleanroom

Press

Imec demonstrates the feasibility of introducing SST-MRAM as a last-level cache at the 5nm technology node
Cleanroom

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Imec first to stack FinFETS with 45nm fin pitch using sequential 3D integration
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Imec and partners report major breakthroughs for spintronic logic devices in two different implementations

Published on:

10 July 2017

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